Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Antisymmetric Magnetoresistance in Magnetic Multilayers With Perpendicular Anisotropy

Published

Author(s)

X M. Cheng, Sergei Urazhdin, T Tchernyshyov, C L. Chien, Valerian I. Nikitenko, Alexander J. Shapiro, Robert D. Shull

Abstract

While magnetoresistance (MR) has generally been found to be symmetric in applied field H in non-magnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show that the antisymmetric MR is due to the appearance of domain walls that run perpendicular to both the magnetization and the current, a geometry existing only in materials with perpendicular magnetic anisotropy. As a result, the extraordinary Hall effect (EHE) gives rise to circulating currents in the vicinity of the domain walls that contributes to the MR. The antisymmetric MR and EHE have been quantitatively accounted for by a theoretical model.
Citation
Physical Review Letters
Volume
97

Keywords

Antisymmetric magnetoresistance, perpendicular anisotropy, tunneling magnetoresistance

Citation

Cheng, X. , Urazhdin, S. , Tchernyshyov, T. , Chien, C. , Nikitenko, V. , Shapiro, A. and Shull, R. (2005), Antisymmetric Magnetoresistance in Magnetic Multilayers With Perpendicular Anisotropy, Physical Review Letters (Accessed December 3, 2023)
Created January 5, 2005, Updated October 12, 2021