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Anomalous Lattice Expansion of Coherently Strained SrTiO3 Thin Films Grown on Si(001) by Kinetically Controlled Sequential Deposition



Joseph Woicik, H Li, P Zschack, E Karapetrova, P Ryan, C R. Ashman, C S. Hellberg


X-ray diffraction has been used to study the epitaxy and lattice expansion of SrTiO3 thin films grown on Si(001) by kinetically controlled sequential deposition (KCSD). Unlike films grown by traditional molecular beam epitaxy (MBE), these films have an in-plane lattice constant that is identical with the Si(001) 1x1 surface-unit cell. The measured out-of-plane lattice constant is consistent with room temperature ferroelectricity at this in-plane lattice constant, and first principles density functional calculations reveal an energetically favorable interfacial defect structure that allows the ferroelectric polarization.
Physical Review Letters


epitaxy, in-plane, KCSD, kinetically controlled, out-of-plane, sequential deposition, SrTiO3


Woicik, J. , Li, H. , Zschack, P. , Karapetrova, E. , Ryan, P. , Ashman, C. and Hellberg, C. (2017), Anomalous Lattice Expansion of Coherently Strained SrTiO<sub>3</sub> Thin Films Grown on Si(001) by Kinetically Controlled Sequential Deposition, Physical Review Letters (Accessed June 14, 2024)


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Created February 19, 2017