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Anomalous Lattice Expansion of Coherently Strained SrTiO3 Thin Films Grown on Si(001) by Kinetically Controlled Sequential Deposition

Published

Author(s)

Joseph Woicik, H Li, P Zschack, E Karapetrova, P Ryan, C R. Ashman, C S. Hellberg

Abstract

X-ray diffraction has been used to study the epitaxy and lattice expansion of SrTiO3 thin films grown on Si(001) by kinetically controlled sequential deposition (KCSD). Unlike films grown by traditional molecular beam epitaxy (MBE), these films have an in-plane lattice constant that is identical with the Si(001) 1x1 surface-unit cell. The measured out-of-plane lattice constant is consistent with room temperature ferroelectricity at this in-plane lattice constant, and first principles density functional calculations reveal an energetically favorable interfacial defect structure that allows the ferroelectric polarization.
Citation
Physical Review Letters

Keywords

epitaxy, in-plane, KCSD, kinetically controlled, out-of-plane, sequential deposition, SrTiO3

Citation

Woicik, J. , Li, H. , Zschack, P. , Karapetrova, E. , Ryan, P. , Ashman, C. and Hellberg, C. (2017), Anomalous Lattice Expansion of Coherently Strained SrTiO<sub>3</sub> Thin Films Grown on Si(001) by Kinetically Controlled Sequential Deposition, Physical Review Letters (Accessed March 3, 2024)
Created February 19, 2017