Anomalous Hall Effect Emerging from Field-Induced Weyl Nodes in SmAlSi

Published

June 4, 2025

Author(s)

Yuxiang Gao, Shiming Lei, Eleanor Clememts, Yichen Zhang, Xue-Jian Gao, Songxue Chi, Kam Law, Ming Yi, Jeffrey Lynn, Emilia Morosan

Abstract

The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic Weyl semimetals. However, the AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has rarely been observed experimentally. Different mechanisms have been proposed to account for the emergence of the AHE from different types of magnetic order. In this Letter, we propose a new model that explains the observed AHE in both the AFM and PM states of the noncentrosymmetric Weyl semimetal SmAlSi. The newly proposed mechanism is based on magnetic-field-induced Weyl node evolution, which qualitatively explains the temperature dependence of the anomalous Hall conductivity, which displays unconventional power-law behavior in both the AFM and PM states of SmAlSi.

Citation

Physical Review Materials

Volume

9

Issue

6

Pub Type

Journals

Download Paper

https://doi.org/10.1103/PhysRevMaterials.9.L061201

Local Download

Keywords

Anomalous Hall Effect, Weyl semimetal, SmAlSi, Long range antiferromagnetic order, non-centrosymmetric crystal structure

Citation

Gao, Y. , Lei, S. , Clememts, E. , Zhang, Y. , Gao, X. , Chi, S. , Law, K. , Yi, M. , Lynn, J. and Morosan, E. (2025), Anomalous Hall Effect Emerging from Field-Induced Weyl Nodes in SmAlSi, Physical Review Materials, [online], https://doi.org/10.1103/PhysRevMaterials.9.L061201, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956891 (Accessed October 9, 2025)