Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime

Published

June 9, 2014

Author(s)

Mark T. Edmonds, Jack T. Hellerstedt, Anton Tadich, Alex Schenk, Kane Michael O'Donnell, Jacob Tosado, Nicholas Butch, Paul Syers, Johnpierre Paglione, Michael S. Fuhrer

Abstract

We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi_1.5Sbd0.05Te_1.7Se_1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance C_TI and the surface state energy-density relationship υ(n), which is found to be consistent with independent ARPES measurements. AT high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

Citation

ACS Nano

Volume

8

Issue

6

Pub Type

Journals

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Citation

Edmonds, M. , Hellerstedt, J. , Tadich, A. , Schenk, A. , O'Donnell, K. , Tosado, J. , Butch, N. , Syers, P. , Paglione, J. and Fuhrer, M. (2014), Air-Stable Electron Depletion of Bi₂Se₃ Using Molybdenum Trioxide into the Topological Regime, ACS Nano, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=916073 (Accessed October 16, 2025)