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Accommodation of Excess Ti in a (Ba,Sr)TiO3 Thin Film with 53.4% Ti Grown on Pt/SiO2/Si by Metalorganic Chemical-Vapor Deposition



Igor Levin, Richard D. Leapman, Debra L. Kaiser, P C. van Buskirk, R Bilodeau, R Carl


The microstructure and chemistry of a Ti-rich (Ba,Sr)TiO3 film with 53.4 % Ti deposited on Pt/SiO2/Si substrate by MOCVD was studied using high-resolution transmission electron microscopy and elemental mapping in electron energy loss spectroscopy. We established that the Ti/Ba ratio at all the grain boundaries in this film is significantly higher than that in the grain interiors. Structural images revealed the presence of disordered amorphous-like regions at some of the grain boundaries and triple junctions. These regions were tentatively identified as those having the highest Ti/Ba ratio in the chemical maps. Analysis of the electron energy loss near edge structure for the O-K edge indicated an increased oxygen to titanium coordination at the grain boundaries. No second phase was detected at the (Ba,Sr)TiO3/Pt interface.
Applied Physics Letters
No. 9


decagonal, quasicrystals, sphere packings


Levin, I. , Leapman, R. , Kaiser, D. , van, P. , Bilodeau, R. and Carl, R. (1999), Accommodation of Excess Ti in a (Ba,Sr)TiO<sub>3</sub> Thin Film with 53.4% Ti Grown on Pt/SiO<sub>2</sub>/Si by Metalorganic Chemical-Vapor Deposition, Applied Physics Letters (Accessed March 2, 2024)
Created August 1, 1999, Updated February 19, 2017