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Absolute Silicon Photodiodes for 160 nm to 254 nm Photons
Published
Author(s)
L R. Canfield, Robert E. Vest, R Korde, H Schmidtke, R Desor
Abstract
Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute flux measurement in this region, is presented. The stability under intense 193 nm irradiation, a property of importance in lithography, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial on-uniformities of the n-on-p diodes were found to be less than one percent at 254 nm and 161 nm wavelengths.
Canfield, L.
, Vest, R.
, Korde, R.
, Schmidtke, H.
and Desor, R.
(1998),
Absolute Silicon Photodiodes for 160 nm to 254 nm Photons, Metrologia
(Accessed April 19, 2024)