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Absolute Silicon Photodiodes for 160 nm to 254 nm Photons



L R. Canfield, Robert E. Vest, R Korde, H Schmidtke, R Desor


Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute flux measurement in this region, is presented. The stability under intense 193 nm irradiation, a property of importance in lithography, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial on-uniformities of the n-on-p diodes were found to be less than one percent at 254 nm and 161 nm wavelengths.


photodiode, quantum yield, radiometry, silicon, trapdetector, ultraviolet


Canfield, L. , Vest, R. , Korde, R. , Schmidtke, H. and Desor, R. (1998), Absolute Silicon Photodiodes for 160 nm to 254 nm Photons, Metrologia (Accessed February 25, 2024)
Created January 1, 1998, Updated February 17, 2017