Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Absolute Silicon Photodiodes for 160 nm to 254 nm Photons

Published

Author(s)

L R. Canfield, Robert E. Vest, R Korde, H Schmidtke, R Desor

Abstract

Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute flux measurement in this region, is presented. The stability under intense 193 nm irradiation, a property of importance in lithography, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial on-uniformities of the n-on-p diodes were found to be less than one percent at 254 nm and 161 nm wavelengths.
Citation
Metrologia
Volume
35

Keywords

photodiode, quantum yield, radiometry, silicon, trapdetector, ultraviolet

Citation

Canfield, L. , Vest, R. , Korde, R. , Schmidtke, H. and Desor, R. (1998), Absolute Silicon Photodiodes for 160 nm to 254 nm Photons, Metrologia (Accessed February 25, 2024)
Created January 1, 1998, Updated February 17, 2017