NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing

Published

Author(s)

Kin P. Cheung

Abstract

The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.
Proceedings Title
VLSI-TSA
Conference Dates
April 26-28, 2010
Conference Location
Shinchu
Pub Type
Conferences

Keywords

STEEP, subthreshold, FET, Density of states
Energy efficiency

Citation

Cheung, K. (2010), On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing, VLSI-TSA, Shinchu, -1 (Accessed October 27, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 26, 2010, Updated February 19, 2017
Was this page helpful?