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On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing



Kin P. Cheung


The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.
Proceedings Title
Conference Dates
April 26-28, 2010
Conference Location


STEEP, subthreshold, FET, Density of states


Cheung, K. (2010), On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing, VLSI-TSA, Shinchu, -1 (Accessed June 13, 2024)


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Created April 26, 2010, Updated February 19, 2017