Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing

Published

Author(s)

Kin P. Cheung

Abstract

The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.
Proceedings Title
VLSI-TSA
Conference Dates
April 26-28, 2010
Conference Location
Shinchu

Keywords

STEEP, subthreshold, FET, Density of states

Citation

Cheung, K. (2010), On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing, VLSI-TSA, Shinchu, -1 (Accessed June 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 26, 2010, Updated February 19, 2017