Cheung, K.
(2010),
On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing, VLSI-TSA, Shinchu, -1
(Accessed October 12, 2024)
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On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published
Author(s)
Abstract
The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.Proceedings Title
VLSI-TSA
Conference Dates
April 26-28, 2010
Conference Location
Shinchu
Pub Type
Conferences
Keywords
STEEP, subthreshold, FET, Density of states
Citation
Issues
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Created April 26, 2010, Updated February 19, 2017