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Hae-Jeong Lee (Fed)
Physical Scientist
Dr. Hae-Jeong Lee joined the International and Academic Affairs Office (IAAO) in November 2022 as a Physical Scientist working on international engagement and science policy issues in the role of International Program Manager. In that role, Dr. Lee manages and oversees the NIST portfolio of activities in Europe, the Middle East, and parts of Asia, and serves as the NIST coordinator for the Embassy Science Fellow program. To perform her duties, she represents NIST at meetings organized by the State Department, the White House, and other National Security bodies on international science and technology (S&T) policy collaboration. She was previously the Lab Officer in the Materials Science and Engineering Division (MSED) at NIST assisting the Division in operating effectively, efficiently, and safely. She has worked for MSED and the semiconductor industry as a research chemist and a process engineer since 1994 after completing her doctorate in inorganic chemistry at the Korea Advanced Institute of Science and Technology (KAIST). She also holds a bachelor’s degree in chemistry from Ewha Womans University. She actively works on developing STEM education for young students from underprivileged backgrounds through a science education initiative.
Research Interests
- Developing new metrology to characterize nanostructures in thin film and membrane using X-ray reflectivity (SXR), small angle x-ray scattering (SAXS), grazing incident small angle x-ray scattering (GI-SAXS), and small angle neutron scattering (SANS)
- Study on the effects of confinement geometry on crosslinking density of UV nanoimprint resist
- Developing advanced characterization methods for determining regular and irregular nano- and micro-scale patterns using SXR as a pattern shape metrology
- Developing novel resist for high-resolution e-beam lithography and fabricating reliable nano-patterns using the newly developed resist
- Structural characterization of porous thin films including porosity, average pore size, pore connectivity, pore size distribution, matrix density, average film density, and water uptake using SXR, SAXS, GI-SAXS, and SANS
- Characterizing surface and interfacial structures and density depth profiles of thin films.