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Daniel Walkup (Assoc)
Daniel Walkup is a UMD Postdoctoral Researcher in the Nanoscale Processes and Measurements Group in the Nanoscale Device Characterization Division. He received a B.A. in Physics from Boston University and a Ph.D. in Physics from Boston College. His doctoral research focused on using scanning tunneling microscopy to investigate the electronic structure of materials with strong spin-orbit coupling, including topological insulators and Iridium oxides, in the presence of doping or local strain. Daniel is working with Joseph Stroscio using scanning tunneling microscopy to study the electronic properties of graphene devices at low temperature and in the presence of high magnetic fields.
Selected Publications
- Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films. I. Zeljkovic, D. Walkup, B.A. Assaf, K.L. Scipioni, R. Sankar, F. Chou and V. Madhavan, Nature Nanotechnology 10, 849-853 (2015).
- First-order melting of a weak spin-orbit Mott Insulator into a correlated metal. T. Hogan, D. Walkup, X. Chen, R. Dally, T. Z. Ward, M.P.M. Dean, J. Hill, Z. Islam, V. Madhavan and S.D. Wilson, Physical Review Letters 114, 257203 (2015).
- Imaging the evolution of metallic states in a correlated iridate. Y. Okada, D. Walkup, H. Lin, C. Dhital, T.-R. Chang, S. Khadka, W. Zhou, H.-T. Jeng, M. Paranjape, A. Bansil, Z. Wang, S.D. Wilson and V. Madhavan, Nature Materials 12, 707-713 (2013)