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Development of Electro-Optical SI-Based Nanoscale Coupled Devices Towards Integrated Optical Communication

Silicon-based light-emitting devices are extremely desirable for the realization of integrated optical signal processing with electronic data processing. This is in tandem with the efforts to develop a generation of ultra-fast computers, based on the combined electronic and optical signal processing on the one hand, and advanced generations of optoelectronic devices for optical communication systems on the other hand.

As part of the efforts to address the need of developing such ultra-fast computers, based on combined electronic and optical signal processing, a family of new silicon nano-scale electro-optical components is developed towards future smooth integration into the silicon microelectronics industry.

Most of the developed devices share special geometry in order to overcome or reinforce physics phenomena and to enable quantum and optical effects. Among others, we can find Silicon-On-Insulator (SOI) Nano-Scale Body (NSB) and Ultra-Thin Body (UTB) MOS light emitting transistors, Enhanced Optical Tunable Excited Capacitors (EOTEC) for Fast Optoelectronic Responsivity (FOR), SOI Photo-Activated Modulators (SOIPAM), SOI Thermo-Activated Modulators (SOITAM), NSOM Photo-detectors and more. A review of the main devices, their specifications, and their impact will be presented.

Dr. Avi Karsenty, JCT

Micro-Nano Technology Center (MNTC)

Created July 2, 2018, Updated October 1, 2018