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This talk will discuss recent work in developing novel electronic devices based on the emerging family of two-dimensional (2D) materials for applications in the next generation nanoelectronic computing. The work that has been done in understanding the fundamental electronic properties of emerging 2D materials that are attractive for device innovations will be presented. The main part of the talk will then focus on our work in exploring the new paradigm of device innovation enabled by the unique properties of 2D materials for ultra-low power memory and logic, as well as a new generation of hardware building block for neuromorphic electronics. The devices to be discussed will include an atomically-thin memristive device based on oxidized bilayer boron nitride that can operate at sub-pA current and sub-fJ energy per bit, which gives 1-2 orders of magnitude improvement comparing to the previous best due to the atomic scale confinement of the filament and the profoundly different ionic kinetics. A range of 2D material based artificial synaptic devices with dynamically re-configurable characteristics, including emulating the heterogeneity in synaptic connections using the anisotropic properties of black phosphorus; a tunable memristive device as a reconfigurable synapse; and a junction based device for emulating bilingual synapse will also be discussed. These devices allow reconfigurable synaptic weight profiles and response time scale that are attractive for building spiking neural network. I will conclude with remarks on our vision about the applications of 2D material based devices in future electronic computing, and how their combination of reconfigurable device functionalities, biological-level energy consumption and device/circuit simplicity are expected to benefit the next-generation electronics technologies.
Sponsors
NSCI Committee
1:00 p.m. - 2:00 p.m. (Gaithersburg, Bldg. 221, Room B145)
11:00 a.m. - 12:00 p.m. (Boulder, VTC in 81-A116)
Prof. Han Wang, USC
BIO: Han Wang is an Assistant Professor in the Department of Electrical Engineering at University of Southern California. He received the B.A. degree with highest honors in electrical and information science from Cambridge University in 2007 and his PhD degree from Massachusetts Institute of Technology in 2013. From 2013 to 2014, he was with the Nanoscale Science and Technology group at IBM T. J. Watson Research Center in Yorktown Heights, NY. His research interests include the fundamental study and device technology of two-dimensional materials including black phosphorus, graphene, hBN, MoS2 etc., with emphasis on exploring both the fundamental understanding and their new applications in advanced electronics, mid- and far-infrared optoelectronics, energy efficient applications, and interaction with biological systems. His past research also includes GaN-based III-V HEMTs for high power millimeter-wave applications and Si power electronic devices. His work has been recognized with numerous awards including the NSF CAREER award 2017, Nano Research journal Top Paper Award 2017, USC Zumberge Faculty Research Award 2015, IEEE International Electron Device Meeting (IEDM) Roger A. Haken Best Paper Award in 2012, MIT Jin-Au Kong Best Doctoral Thesis Award 2013, and the Best Paper Award in International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2010. Dr. Wang has authored or coauthored more than 70 publications in distinguished journals and conferences.
Outside attendees need to contact Barry Schneider in order to obtain the site badges required to enter NIST grounds and to attend the seminar. 24 hour notice is required for US citizens and 3 days for non-US citizens. Please contact bis@nist.gov to be added to the visitor list. Visitors must check in at the NIST Visitor Center to pick up their badges. A photo ID is required for US citizens and a passport or green card for foreign nationals. There is also the possibility of viewing the seminar as a webcast. Again, please contact Barry Schneider for details preferably by email.