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Prof. T. Venkatesan
National University of Singapore
The field of Oxide Electronics got its boost in the 1987-time frame with the invention of the Pulsed Laser Deposition process which enabled the rapid prototyping of virtually most multi component oxide films. Since then the research in this field has accelerated, several novel phenomena have been uncovered in oxides and their heterostructures and currently we are poised on the threshold for this field to take off commercially- though we have no clue as to where the breakthrough will come from. I will address this issue in terms of the evolving landscape of opportunities in the field of electronics, memory, photonics and Plasmonics.
I will also give examples of recent work in ferroelectric tunnel junctions where barriers consisting of just two unit cells of ferroelectrics seem to be adequate to provide decent ON/OFF ratios, a novel water splitting Niobate system with an unusually large carrier density despite its large 4.1 eV bandgap and the unusual interaction of electric fields with magnetism at oxide interfaces.