Lateral SiOx Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation

Published

November 1, 2000

Author(s)

K Morimoto, K Morita, K Ohnaka, John A. Dagata

Abstract

Tunneling transistors designed with a lateral tunnel barrier between source and drain electrodes have attracted much attention recently as an approach to silicon-compatible nanoelectronics (1). In order to realize this device, the lateral tunneling barrier must be fabricated with a width of less than 10 nm. Fabrication methods of a lateral tunnel junction using scanned probe microscope (SPM) oxidation were described previously, but, so far, research efforts have focused on forming a metal/insulator junction as with the nb/nbO_x system[2]. In this work, we demonstrate preliminary results towards fabricating and evaluating a lateral Si/SiO_x tunneling junction on an ultra-thin Si layer by SPM oxidation.

Proceedings Title

Fourth International Workshop on Quantum Funtional Devices

Conference Dates

November 15-17, 2000

Conference Location

Kanazawa, 1, JA

Conference Title

MITI R&D Program (Quantum Functional Device Project) supported by NEDO

Pub Type

Conferences

Keywords

barrier, lateral tunneling, nonelectronics, scanned probe oxidation

Citation

Morimoto, K. , Morita, K. , Ohnaka, K. and Dagata, J. (2000), Lateral SiO_x Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation, Fourth International Workshop on Quantum Funtional Devices, Kanazawa, 1, JA (Accessed April 25, 2024)