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Publication Citation: Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires

NIST Authors in Bold

Author(s): Curt A. Richter; Hao Xiong; Xiaoxiao Zhu; Wenyong Wang; Vincent M. Stanford; Qiliang Li; D. E. Ioannou; Woong-Ki Hong; Takhee Lee;
Title: Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires
Published: April 30, 2008
Abstract: Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies.  We describe two unique approaches to successfully fabricate nanowire devices, one based upon harvesting and positioning nanowires, and one based upon the direct growth of nanowires in predefined locations.  Test structures are fabricated and electronically characterized to probe the fundamental properties of chemical-vapor-deposition grown silicon nanowires.  Important information about current transport and fluctuations in materials and devices can be derived from noise measurements, and low frequency 1/f noise has traditionally been utilized as a quality and reliability indicator for semiconductor devices.  Both low frequency 1/f noise and random telegraph signals are shown here to be powerful methods for probing trapping defects in nanoelectronic devices.
Conference: International Reliability Physics Symposium
Proceedings: Proceedings of the 46th Annual IEEE Reliability Physics Symposium 2008
Pages: pp. 39 - 45
Location: Phoenix, AZ
Dates: April 27-30, 2008
Keywords: nanoelectronics, semiconductor nanowires, 1/f noise, test structures
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (552KB)