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Publication Citation: Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm

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Author(s): Bin Li; Li Shi; Paul S. Ho; JiPing Zhou; Richard A. Allen; Michael W. Cresswell;
Title: Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Published: April 01, 2006
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealing a nickel coating that was deposited on single-crystal silicon features that were as narrow as 100 nm and had vertical and nearly atomically flat sidewalls. The features were patterned on (110) silicon-on-insulator wafers with i-line lithography which replicated a test structure from which V/I measurements could be extracted. Subsequently, the patterning of single-crystal features with direct-write e-beam lithography has been developed to reduce the linewidths of NiSi features to below 40 nm.
Proceedings: IEEE ICMTS International Conference on Microelectronic Test Structures
Pages: pp. 18 - 23
Location: Austin, TX
Dates: March 6-9, 2006
Keywords: annealing;CD;electron-beam lithography;interconnect;KOH;lattice plane selective etching;linewidth;nickel silicide;SIMOX;TMAH
Research Areas: Semiconductors