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|Author(s):||Bin Li; Li Shi; Paul S. Ho; JiPing Zhou; Richard A. Allen; Michael W. Cresswell;|
|Title:||Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm|
|Published:||April 01, 2006|
|Abstract:||A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealing a nickel coating that was deposited on single-crystal silicon features that were as narrow as 100 nm and had vertical and nearly atomically flat sidewalls. The features were patterned on (110) silicon-on-insulator wafers with i-line lithography which replicated a test structure from which V/I measurements could be extracted. Subsequently, the patterning of single-crystal features with direct-write e-beam lithography has been developed to reduce the linewidths of NiSi features to below 40 nm.|
|Proceedings:||IEEE ICMTS International Conference on Microelectronic Test Structures|
|Pages:||pp. 18 - 23|
|Dates:||March 6-9, 2006|
|Keywords:||annealing,CD,electron-beam lithography,interconnect,KOH,lattice plane selective etching,linewidth,nickel silicide,SIMOX,TMAH|