| Author(s): |
James P. Randa; David K. Walker; Lawrence P. Dunleavy; Robert L. Billinger; Joseph P. Rice; |
| Title: |
Characterization of On-Wafer Diode Noise Sources |
| Published: |
June 01, 1998 |
| Abstract: |
A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on-wafer measurements of noise temperature and details the preliminary design and construction of the transfer standards. Measurements are presented of their noise temperatures at frequencies from 8 to 12 GHz. Such transfer standards could be used in interlaboratory comparisons or as a verification tool for checking on-wafer noise calibration. |
| Proceedings: |
Tech Dig., Auto. RF Tech. Group Conf. |
| Pages: |
pp. 53 - 61 |
| Location: |
Baltimore, MD |
| Dates: |
June 7-12, 1998 |
| Keywords: |
;noise;noise measurement;noise source;on-wafer measurement;noise characterization;noise temperature; |
| Research Areas: |
Electronics & Telecommunications, Microelectronics, Electromagnetics |
| PDF version: |
 Click here to retrieve PDF version of paper (60KB) |
