Randa, J.
, Walker, D.
, Dunleavy, L.
, Billinger, R.
and Rice, J.
(1998),
Characterization of On-Wafer Diode Noise Sources, Tech Dig., Auto. RF Tech. Group Conf., Baltimore, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=27897
(Accessed April 19, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of On-Wafer Diode Noise Sources
Published
Author(s)
, , Lawrence P. Dunleavy, , John Rice
Abstract
A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on-wafer measurements of noise temperature and details the preliminary design and construction of the transfer standards. Measurements are presented of their noise temperatures at frequencies from 8 to 12 GHz. Such transfer standards could be used in interlaboratory comparisons or as a verification tool for checking on-wafer noise calibration.Proceedings Title
Tech Dig., Auto. RF Tech. Group Conf.
Conference Dates
June 7-12, 1998
Conference Location
Baltimore, MD
Pub Type
Conferences
Download Paper
Keywords
noise, noise measurement, noise source, on-wafer measurement, noise characterization, noise temperature
Citation
Created June 1, 1998, Updated February 19, 2017