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Publication Citation: Characterization of On-Wafer Diode Noise Sources

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Author(s): James P. Randa; David K. Walker; Lawrence P. Dunleavy; Robert L. Billinger; John Rice;
Title: Characterization of On-Wafer Diode Noise Sources
Published: June 01, 1998
Abstract: A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on-wafer measurements of noise temperature and details the preliminary design and construction of the transfer standards. Measurements are presented of their noise temperatures at frequencies from 8 to 12 GHz. Such transfer standards could be used in interlaboratory comparisons or as a verification tool for checking on-wafer noise calibration.
Proceedings: Tech Dig., Auto. RF Tech. Group Conf.
Pages: pp. 53 - 61
Location: Baltimore, MD
Dates: June 7-12, 1998
Keywords: noise,noise measurement,noise source,on-wafer measurement,noise characterization,noise temperature
Research Areas: Electronics & Telecommunications, Microelectronics, Electromagnetics
PDF version: PDF Document Click here to retrieve PDF version of paper (62KB)