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Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 131 to 137.
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131. Theory of Ballistic Electron Emission Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi^d2^-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a mode ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620403

132. Theory of Photo-induced Resonant Tunneling in Heterojunctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: S Apell, David R. Penn, Mark D Stiles
Abstract: The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiple ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620405

133. Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi^d2^/Si(111) and NiSi^d2^/Si(111) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620384

134. Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620390

135. Electron Transmission Through NiSi^d2^-Si Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1989
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ Calculations of electron transmission through epitaxial NiSi^d2^/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620349

136. Ultraviolet Photoemission Spectra of Para-Phenylene-Ethynylene Thiols Chemisorbed on Gold
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/0008
Authors: Christopher D Zangmeister, Roger D van Zee, Steven W Robey, N E Gruhn, Yuxing Yao, J M Tour
Abstract: Photoemission spectra of para-phenylene-ethynylene thiols chemisorbed on gold have been measured. Four compounds were studied: 4,4'-bis(phenylethynyl)-benzenethiol, 4 (phenylethynyl)benzenethiol, 4-ethynylbenzenethiol, and benzenethiol. The spectra w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830991

137. Energy-Level Alignment and Work Function Shifts for Thiol-Bound Monolayers of Conjugated Molecules Self-Assembled on Ag, Cu, Au, and Pt
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/0007
Authors: Christopher D Zangmeister, Laura B. Picraux, Roger D van Zee, Yuxing Yao, J M Tour
Abstract: Photoemission spectra have been used to determine the energy-level alignment and work function of monolayers of 4,4'-bis-(phenylethynyl)benzenethiol, 2 naphthalene thiol, and 3-(naphthalen-2-yl)propane-1-thiol self-assembled on Ag, Cu, Au, and Pt. Fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830989



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