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PUBLICATIONS

Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout

Published

Author(s)

Tammy Lucas, John Biesecker, W.Bertrand (Randy) Doriese, Shannon Duff, Malcolm Durkin, Richard Lew, Joel Ullom, Michael Vissers, Dan Schmidt

Abstract

We have examined the influence of bump shape and bonding pressure on low temperature electrical properties of indium bump connections including transition temperature, normal resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. Critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm by 17 µm are observed.
Citation
Journal of Low Temperature Physics
Pub Type
Journals

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Keywords

hybridization, indium bumps, die bonding
Physics

Citation

Lucas, T. , Biesecker, J. , Doriese, W. , Duff, S. , Durkin, M. , Lew, R. , Ullom, J. , Vissers, M. and Schmidt, D. (2024), Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout, Journal of Low Temperature Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956826 (Accessed May 5, 2024)

Created April 20, 2024, Updated April 23, 2024