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You searched on: Topic Area: Characterization, Nanometrology, and Nanoscale Measurements

Displaying records 41 to 50 of 130 records.
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41. Surface Chemical Transformations of UV irradiated Silica-Epoxy Nanocomposites
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 5/15/2013
Authors: Justin M Gorham, Tinh Nguyen, Deborah L Stanley, Coralie Bernard, Richard D Holbrook
Abstract: Silica nanoparticles (SiNPs) incorporated into a polymeric matrix, or silica nanocomposites (SiNCs), are used in a wide variety of commercially available products in numerous natural and artificial environments. Environmental factors, such as light, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913534

42. Quantitative Analysis of Dendron-Conjugated Cisplatin-Complexed Gold Nanoparticles Using Scanning Particle Mobility Mass Spectrometry
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 5/8/2013
Authors: De-Hao D. Tsai, Tae Joon Cho, Sherrie R. Elzey, Julien C. Gigault, Vincent A Hackley
Abstract: We report a high-resolution and traceable method to quantify the drug loading on nanoparticle-based cancer therapeutics, and demonstrate this method using a model cisplatin functionalized dendron-gold nanoparticle (AuNP) conjugate. Electrospray diffe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912782

43. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

44. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

45. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

46. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230

47. Robust Elemental Mapping of Nanostructures at Ultrahigh Resolution using Event-Streamed Spectrum Imaging in an Aberration-Corrected Analytical Electron Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Andrew A Herzing, Ian M. Anderson
Abstract: We detail the application of X-ray energy dispersive spectroscopy (XEDS) event-streamed spectral imaging (ESSI) in an aberration-corrected analytical electron microscope (AEM) as a reliable method for the acquisition of ultra-high spatial resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910229

48. Metrology For Organic Monolayers On Cobalt Surfaces
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

49. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

50. Gold nanorod separation and characterization by asymmetric-flow field flow fractionation with UV-Vis detection
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 11/14/2012
Authors: Julien C. Gigault, Tae Joon Cho, Robert I. MacCuspie, Vincent A Hackley
Abstract: The application of asymmetrical-flow field flow fractionation (A4F) for gold nanorod (GNR) fractionation and characterization was comprehensively investigated. We report on two novel aspects of this application. The first addresses the analytical cha ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911860



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