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Topic Area: Characterization, Nanometrology, and Nanoscale Measurements

Displaying records 41 to 50 of 199 records.
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41. Distributed Force Probe Bending Model of CD-AFM Bias
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and signif ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912266

42. Robust Elemental Mapping of Nanostructures at Ultrahigh Resolution using Event-Streamed Spectrum Imaging in an Aberration-Corrected Analytical Electron Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Andrew A Herzing, Ian M. Anderson
Abstract: We detail the application of X-ray energy dispersive spectroscopy (XEDS) event-streamed spectral imaging (ESSI) in an aberration-corrected analytical electron microscope (AEM) as a reliable method for the acquisition of ultra-high spatial resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910229

43. Metrology For Organic Monolayers On Cobalt Surfaces
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

44. Frontiers of Characterization and Metrology for Nanoelectronics: 2013
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/26/2013
Authors: Erik M Secula, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913713

45. Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A Richter
Abstract: The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been appl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913172

46. Measurement Uncertainties in MEMS Kinematics by Super-Resolution Fluorescence Microscopy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Craig Dyer McGray, Samuel M Stavis, Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912891

47. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

48. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

49. Experimental Evidence for s-Wave Pairing Symmetry in Superconducting Cu_{x}Bi_{2}Se_{3} Single Crystals Using a Scanning Tunneling Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/12/2013
Authors: Niv Levy, Tong Zhang, Jeonghoon Ha, Fred Sharifi, Alec Talin, Young Kuk, Joseph A Stroscio
Abstract: Topological superconductors (TS) are a newly predicted phase of matter which is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of its topological character, TS supports massless itinerant quas ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912712

50. Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/12/2013
Authors: Tong Zhang, Niv Levy, Jeonghoon Ha, Young Kuk, Joseph A Stroscio
Abstract: Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913044



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