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Topic Area: Characterization, Nanometrology, and Nanoscale Measurements

Displaying records 41 to 50 of 203 records.
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41. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran (Ravikiran) Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

42. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran (Ravikiran) Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

43. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

44. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230

45. Distributed Force Probe Bending Model of CD-AFM Bias
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and signif ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912266

46. Robust Elemental Mapping of Nanostructures at Ultrahigh Resolution using Event-Streamed Spectrum Imaging in an Aberration-Corrected Analytical Electron Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Andrew A Herzing, Ian M. Anderson
Abstract: We detail the application of X-ray energy dispersive spectroscopy (XEDS) event-streamed spectral imaging (ESSI) in an aberration-corrected analytical electron microscope (AEM) as a reliable method for the acquisition of ultra-high spatial resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910229

47. Metrology For Organic Monolayers On Cobalt Surfaces
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

48. Frontiers of Characterization and Metrology for Nanoelectronics: 2013
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/26/2013
Authors: Erik M Secula, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913713

49. Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A Richter
Abstract: The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been appl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913172

50. Measurement Uncertainties in MEMS Kinematics by Super-Resolution Fluorescence Microscopy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Craig Dyer McGray, Samuel M Stavis, Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912891



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