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21. Indentation Fracture of Low Dielectric Constant Films, Part II. Indentation Fracture Mechanics Model
Topic: Ceramics
Published: 9/12/2008
Authors: Dylan Morris, Robert Francis Cook
Abstract: Part I of this two-part work explored the instrumented-indentation and fracture phenomena of compliant, low dielectric constant (low-k) films on silicon substrates. The effect of film thickness and probe acuity on the fracture response, as well as th ...

22. Contributions of First-Principles Calculations to Understanding Structure-Property Relationships in Perovksites
Topic: Ceramics
Published: 9/1/2008
Author: Eric J Cockayne

23. The effect of interfacial roughness on the thin film morphology and charge transport of high performance polythiphenes
Topic: Ceramics
Published: 9/1/2008
Authors: Yeon-Gil Jung, Regis J Kline, Daniel A Fischer, Eric K Lin, Martin Heeney, Iain McCulloch

24. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films
Topic: Ceramics
Published: 8/21/2008
Authors: C Rhodes, S E Lappi, Daniel A Fischer, S Sambasivan, Jan Genzer, S Franzen
Abstract: The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate have been investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent ...

25. Nature of Transition Layers at the SiO^d2^/SiC Interface
Topic: Ceramics
Published: 7/14/2008
Authors: T Zheleva, Aivars Lelis, G Duscher, F Liu, Igor Levin, M Das
Abstract: Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chem ...

26. Roughness-Induced Superhydrophobicity: A Way to Design Non-Adhesive Surfaces
Topic: Ceramics
Published: 7/4/2008
Authors: Michael Nosonovsky, Bharat Bhushan
Abstract: Non-adhesive and water-repellent surfaces are required for many tribological applications. Roughness-induced superhydrophobicty has been suggested as a way to reduce adhesion and stiction. In this paper, the theory of roughness-induced superhydrophob ...

27. Estimation of Contact Area of Nanoparticles in Chains Using Continuum Elastic Contact Mechanics
Topic: Ceramics
Published: 6/19/2008
Authors: Jaroslaw Grobelny, Pradeep N. (Pradeep) Namboodiri, Doo-In Kim
Abstract: The key challenge in understanding the nanomechanical behavior of nanoparticle chains is strongly dependent on accurate determination of the contact area between individual particles. Experimental determination of the contacting radius is extremely d ...

28. Deprotecting Thioacetyl-Terminated Terphenyldithiol for Assembly on Gallium Arsenide
Topic: Ceramics
Published: 5/8/2008
Authors: D Krapchetov, H Ma, AKY Jen, Daniel A Fischer, Y-L Loo
Abstract: We characterize the assembly of terphenyldithiol (TPDT) on gallium arsenide from ethanol (EtOH) and tetrahydrofuran (THF) as a function of ammonium hydroxide (NH4OH) concentration. NH4OH facilitates the conversion of thioacetyl end groups of the TPDT ...

29. Stability Phase-Fields in the and Pyrochlore Formation in Sections of the Bi^d2^O^d3^-Al^d2^O^d3-^Nb^d2^O^d5^
Topic: Ceramics
Published: 5/8/2008
Authors: Terrell A Vanderah, Jorge Torres Guzman, Juan C Nino
Abstract: Bismuth niobate-based ceramic materials are of interest for embedded elements such as capacitors, resonators, and filters because they exhibit high relative dielectric permittivities and tend to be processible at temperatures in the 1000 C to 1200 ...

30. Close Proximity Self-Aligned Shadow Mask for Sputter Deposition Onto a Membrane or Cavity
Topic: Ceramics
Published: 5/5/2008
Authors: Ravi Kummamuru, L Hu, Lawrence P. Cook, M Y Efremov, E A Olson, Martin L Green, L H Allen
Abstract: In this paper we report fabrication of a shadow mask designed for sputtering into cavities or on the back surface of freestanding silicon nitride (SiNx) membranes. Sputter deposition through a shadow mask typically results in spreading of the deposit ...

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