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Topic Area: Semiconductors

Displaying records 61 to 70 of 149 records.
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61. Experimental Compressibilities and Structure Factors of Poly(ethylene glycol)Molecular Masses 2000 to 8000 in Aqueous-Solution
Topic: Semiconductors
Published: 6/5/2009
Author: Kenneth Alan Rubinson
Abstract: Small-Angle Neutron Scattering (SANS) is a powerful nondestructive technique that can measure simultaneously macroscopic compressibilities of solutions, overall shapes of macromolecular solutes, as well as their intermolecular structural correlation ...

62. Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale
Topic: Semiconductors
Published: 4/8/2009
Authors: Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A Allen, Min K. Kang, Rui Huang, Paul S. Ho
Abstract: Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical prop ...

63. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Topic: Semiconductors
Published: 4/2/2009
Authors: Michael W Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...

64. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Semiconductors
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...

65. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...

66. Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings
Topic: Semiconductors
Published: 3/16/2009
Authors: Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Abstract: Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at nor ...

67. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Semiconductors
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...

68. Effect of crystallographic orientation on phase transformations during indentation of silicon
Topic: Semiconductors
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...

69. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Topic: Semiconductors
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...

70. Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines
Topic: Semiconductors
Published: 2/25/2009
Authors: Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant ...

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