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Topic Area: Semiconductors

Displaying records 61 to 70 of 144 records.
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61. Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings
Topic: Semiconductors
Published: 3/16/2009
Authors: Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher L Soles, Eric K Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Abstract: Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at nor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854130

62. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Semiconductors
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901409

63. Effect of crystallographic orientation on phase transformations during indentation of silicon
Topic: Semiconductors
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854143

64. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Topic: Semiconductors
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900181

65. Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines
Topic: Semiconductors
Published: 2/25/2009
Authors: Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32991

66. Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate
Topic: Semiconductors
Published: 1/8/2009
Authors: Winnie K Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
Abstract: We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with thos ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854090

67. An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability
Topic: Semiconductors
Published: 1/5/2009
Authors: J.T. Ryan, P. M. Lenahan, A.T. Krishnan, S. Krishnan, Jason P Campbell
Abstract: It has been shown that the negative bias temperature instability (NBTI) may be significantly suppressed through the incorporation of fluorine in the gate oxide. In this study, we use the electrically-detected magnetic resonance technique of spin depe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900189

68. A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Topic: Semiconductors
Published: 12/23/2008
Authors: Richard A Allen, Janet M Cassard, Winthrop A. Baylies, David Thomas Read, George David Quinn, Frank W DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract: A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the tes ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33132

69. Comparison of Nanoscale Measurements of Strain and Stress using Electron Back Scattered Diffraction and Confocal Raman Microscopy
Topic: Semiconductors
Published: 12/12/2008
Authors: Mark D Vaudin, Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: Strains in Si as small as 104 (corresponding to stresses of 10 MPa) have been measured using electron back scatter diffraction (EBSD), with spatial resolution close to 10 nm, and confocal Raman microscopy (CRM) with spatial resolution app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854129

70. Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer
Topic: Semiconductors
Published: 12/5/2008
Authors: Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E Ioannou, John S Suehle, Curt A Richter
Abstract: Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33041



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