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Author: martin sohn
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1. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Yeungjoon Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903754

2. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Yeungjoon Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931

3. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois Romain Francis Goasmat, Martin Yeungjoon Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

4. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Yeungjoon Sohn, Hui Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

5. Koehler Illumination for High-Resolution Optical Metrology
Published: 3/1/2006
Authors: Martin Yeungjoon Sohn, Bryan M Barnes, Lowell P. Howard, Richard M Silver, Ravikiran Attota, Michael T. Stocker
Abstract: Accurate preparation of illumination is critical for high-resolution optical metrology applications such as line width and overlay measurements. To improve the detailed evaluation and alignment of the illumination optics, we have separated Koehler il ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823207

6. Optical illumination optimization for patterned defect inspection
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Yeungjoon Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

7. Photomask metrology using a 193 nm scatterfield microscope
Published: 9/30/2009
Authors: Richard Quintanilha, Bryan M Barnes, Martin Yeungjoon Sohn, Lowell P. Howard, Richard M Silver, James Edward Potzick, Michael T. Stocker
Abstract: The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903929

8. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Yeungjoon Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

9. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois Romain Francis Goasmat, Hui Zhou, Martin Yeungjoon Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

10. Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light
Published: 4/4/2012
Authors: Bryan M Barnes, Martin Yeungjoon Sohn, Francois Romain Francis Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910963