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1. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903754

2. 193 nm scatterfield microscope illumination optics
Published: 12/17/2014
Authors: Martin Y Sohn, Richard M Silver
Abstract: A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916250

3. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931

4. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916347

5. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

6. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

7. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913510

8. Koehler Illumination for High-Resolution Optical Metrology
Published: 3/1/2006
Authors: Martin Y Sohn, Bryan M Barnes, Lowell P. Howard, Richard M Silver, Ravikiran Attota, Michael T. Stocker
Abstract: Accurate preparation of illumination is critical for high-resolution optical metrology applications such as line width and overlay measurements. To improve the detailed evaluation and alignment of the illumination optics, we have separated Koehler il ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823207

9. Optical illumination optimization for patterned defect inspection
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

10. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915807



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