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Author: martin sohn
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1. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903754

2. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran (Ravikiran) Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931

3. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui H. Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

4. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui H. Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

5. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui H. Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913510

6. Koehler Illumination for High-Resolution Optical Metrology
Published: 3/1/2006
Authors: Martin Y Sohn, Bryan M Barnes, Lowell P. Howard, Richard M Silver, Ravikiran (Ravikiran) Attota, Michael T. Stocker
Abstract: Accurate preparation of illumination is critical for high-resolution optical metrology applications such as line width and overlay measurements. To improve the detailed evaluation and alignment of the illumination optics, we have separated Koehler il ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823207

7. Optical illumination optimization for patterned defect inspection
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui H. Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

8. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui H. Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915807

9. Photomask metrology using a 193 nm scatterfield microscope
Published: 9/30/2009
Authors: Richard Quintanilha, Bryan M Barnes, Martin Y Sohn, Lowell P. Howard, Richard M Silver, James Edward Potzick, Michael T. Stocker
Abstract: The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903929

10. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991



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