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Author: joseph kopanski

Displaying records 11 to 20 of 111 records.
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11. Metrology for Nanosystems and Nanoelectronics Reliability Assessments
Published: 8/20/2012
Authors: Yaw S Obeng, Chukwudi Azubuike Okoro, Joseph J Kopanski
Abstract: The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911433

12. Calibrated nanoscale dopant profiling using a scanning microwave microscope.
Published: 1/3/2012
Authors: Pavel Kabos, Thomas M Wallis, H P. Hubner, I. Humer, M. Hochleitner, M. Fenner, M. Moertelmaier, C. Rankl, Atif (Atif) Imtiaz, H. Tanbakuchi, P. Hinterdorfer, J. Smoliner, Joseph J Kopanski, F. Kienberger
Abstract: The scanning microwave microscope (SMM) is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope (AFM) combined with a vector network analyzer operating between 1- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908761

13. Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips
Published: 11/18/2011
Authors: Joseph J Kopanski, Ilona Sitnitsky, Victor H. Vartanian, Paul McClure, Vladimir Mancevski
Abstract: Electrical scanning probe microscopes, such as the scanning capacitance microscope (SCM) for two dimensional dopant profiling, scanning Kelvin force microscope (SKFM) for surface potential measurements, and the tunneling atomic force microscope (TUNA ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908834

14. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

15. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Published: 5/4/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Madelaine Herminia Hernandez, Andrew A Herzing, Lee J Richter, Christina Ann Hacker, Joseph J Kopanski, Jan Obrzut, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908437

16. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Published: 5/1/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A Herzing, Madelaine Herminia Hernandez, Joseph J Kopanski, Christina Ann Hacker, Curt A Richter
Abstract: Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907805

17. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

18. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

19. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

20. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968



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