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Author: david gundlach
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Displaying records 1 to 10 of 58 records.
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1. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

2. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911342

3. Characterization of Soluble Anthradithiophene Derivatives
Published: 3/18/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905386

4. Characterization of a Soluble Anthradithiophene Derivative
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704

5. Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation
Published: 6/1/2010
Authors: Akin Akturk, M. Holloway, S. Potbhare, David J Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P Cheung
Abstract: We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907042

6. Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs
Published: 2/17/2008
Authors: David J Gundlach, James Royer, Behrang H Hamadani, Lucile C. Teague, Andrew J Moad, Oana Jurchescu, Oleg A Kirillov, Lee J Richter, James G. Kushmerick, Curt A Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E Anthony
Abstract: Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32683

7. Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
Published: 3/8/2008
Authors: David J Gundlach, James E Royer, SK Park, Sankar Subramanian, Oana Jurchescu, Behrang H Hamadani, Andrew Moad, Regis J Kline, LC Teague, Oleg A Kirillov, Curt A Richter, Lee J Richter, Sean R Parkin, Thomas Jackson, JE Anthony
Abstract: The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854062

8. Controlling the Microstructure of Solution-Processible Small Molecules in Thin-Film Transistors through Substrate Chemistry
Published: 2/4/2011
Authors: Regis J Kline, Steven D Hudson, Xinran Zhang, David J Gundlach, Andrew Moad, Lee J Richter, Oana Jurchescu, Thomas Jackson, Sanker Subramanian, John E Anthony, Michael F. Toney
Abstract: Solution-processible small molecules have tremendous potential for providing both high charge carrier mobility and low cost processing. This study outlines a detailed microstructural study of the effect of substrate chemistry on fluorinated 5,11-bis ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906810

9. Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors
Published: 3/31/2008
Authors: Oana Jurchescu, Behrang H Hamadani, Hao Xiong, Sungkyu Park, Sankar Subramanian, Neil M Zimmerman, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in soluti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32777

10. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396



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