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|Author(s):||Gheorghe Stan; Sean King; Robert F. Cook;|
|Title:||Elastic modulus of low-k dielectric thin films measured by load-dependent contact-resonance atomic force microscopy|
|Published:||September 14, 2009|
|Abstract:||Correlated force and contact-resonance versus displacement responses have been resolved using load-dependent contact-resonance atomic force microscopy (AFM) to determine the elastic modulus of low-k dielectric thin films. The measurements consisted of recording simultaneously both the deflection and resonance frequency shift of an AFM cantilever-probe as the probe was gradually brought in and out of contact. As the applied forces were restricted to the range of adhesive forces, low-k dielectric films of elastic modulus varying from GPa to hundreds of GPa were measurable in this investigation. Over this elastic modulus range, the reliability of load-dependent contactresonance AFM measurements was confirmed by comparing these results with that from picosecond laser acoustics measurements.|
|Citation:||Journal of Materials Research|
|Pages:||pp. 2960 - 2964|
|Keywords:||nanomechanical properties, atomic force microscopy, low-k dielectric films|
|Research Areas:||Characterization, Nanometrology, and Nanoscale Measurements|
|PDF version:||Click here to retrieve PDF version of paper (154KB)|