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Publication Citation: A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension

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Author(s): Joseph~undefined~undefined~undefined~undefined~undefined Lenhart; Ronald L. Jones; Eric K. Lin; Christopher L. Soles; Wen-Li Wu; D M. Goldfarb; M Angelopoulos;
Title: A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension
Published: January 28, 2002
Abstract: A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of processing variables in the photo-resist film and using a set of microscopy tools to 'map' the photo-resist properties as a function of this gradient. Photo-resist lines will be developed in different regions of the film. SEM analysis of the line structure combined with the microscopy mapping, and knowledge of the gradient variables provides a mechanism to rapidly relate processing variables, photo-resist film properties, and the LER / CD of developed features. While this combinatorial methodology could prove useful for empirical optimization of processing conditions, our focus will be to determine the fundamental polymer science issues that govern LER / CD. Initial data is presented that illustrates the potential of the combinatorial research concept for dramatic reductions in research and development cycles times. In particular, the thermal de-protection curve of a model photo-resist system was rapidly developed using a high throughput combinatorial technique. Thermal degradation of the resist was verified with traditional experimental design by using a combination of specular x-ray reflectivity (SXR), atomic force microscopy (AFM), and Fourier transform infrared spectroscopy (FTIR). Integration of combinatorial techniques with non-combinatorial tools provides a unique methodology with the potential to rapidly disseminate important factors that govern LER and CD.
Citation: Journal of Vacuum Science and Technology B
Volume: 20
Pages: pp. 704 - 709
Keywords: combinatorial;deprotection;line edge roughness;photolithography;photoresist;polymer
Research Areas: Semiconductors
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