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|Author(s):||Shuhui Kang; Wen-Li Wu; B D. Vogt; Vivek M. Prabhu; Eric K. Lin; Karen Turnquest;|
|Title:||Evaluation of the 3D Compositional Fluctuation Effect on Line-Edge-Roughness|
|Published:||February 25, 2007|
|Abstract:||Line-edge-roughness (LER) and the relationship to resist processing and materials design is a critical problem for sub-65 nm photolithography. In this work we investigate how chemical composition fluctuations (heterogeneity) produced by the reaction-diffusion of photoacids in chemically amplified photoresists affect the resulting LER through computer simulation. A 3-dimensional microscopic picture of reaction-diffusion of individual photoacid accounts for the deprotection fluctuation formed by the post exposure bake (PEB). The resulting LER is related to both the gradient of average deprotection profile and the degree of local chemical heterogeneity. The effect of dose contrast, PEB time, diffusivity of photoacid and trapping strength on the chemical heterogeneity are evaluated and compared to neutron reflectivity measurements.|
|Conference:||SPIE Advanced Lithography|
|Proceedings:||Proceedings of SPIE|
|Location:||San Jose, CA|
|Dates:||February 25-March 2, 2007|
|Keywords:||diffusion,LER,line edge roughness,photo acid,photoresist,simulation,thin film|
|PDF version:||Click here to retrieve PDF version of paper (269KB)|