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Publication Citation: Evaluation of the 3D Compositional Fluctuation Effect on Line-Edge-Roughness

NIST Authors in Bold

Author(s): Shuhui Kang; Wen-Li Wu; B D. Vogt; Vivek M. Prabhu; Eric K. Lin; Karen Turnquest;
Title: Evaluation of the 3D Compositional Fluctuation Effect on Line-Edge-Roughness
Published: February 25, 2007
Abstract: Line-edge-roughness (LER) and the relationship to resist processing and materials design is a critical problem for sub-65 nm photolithography. In this work we investigate how chemical composition fluctuations (heterogeneity) produced by the reaction-diffusion of photoacids in chemically amplified photoresists affect the resulting LER through computer simulation. A 3-dimensional microscopic picture of reaction-diffusion of individual photoacid accounts for the deprotection fluctuation formed by the post exposure bake (PEB). The resulting LER is related to both the gradient of average deprotection profile and the degree of local chemical heterogeneity. The effect of dose contrast, PEB time, diffusivity of photoacid and trapping strength on the chemical heterogeneity are evaluated and compared to neutron reflectivity measurements.
Conference: SPIE Advanced Lithography
Proceedings: Proceedings of SPIE
Volume: 6519
Pages: 10 pp.
Location: San Jose, CA
Dates: February 25-March 2, 2007
Keywords: diffusion,LER,line edge roughness,photo acid,photoresist,simulation,thin film
Research Areas: Polymers
PDF version: PDF Document Click here to retrieve PDF version of paper (269KB)