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|Author(s):||Vivek M. Prabhu; S Sambasivan; Daniel A. Fischer; Linda K. Sundberg; Robert D. Allen;|
|Title:||Quantitative Depth Profiling of Photoacid Generators in Photoresist Materials by Near-Edge X-Ray Absorption Fine Structure Spectroscopy|
|Published:||May 09, 2006|
|Abstract:||We apply near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to quantify the surface composition and depth profiling of photoacid generators in thin film photoresist materials by varying the entrance-grid bias of the photoelectron detector. By considering model compositional profiles, NEXAFS distinguishes the surface molar excess within the top 6 nm from the bulk. A surface enriched system, triphenylsulfonium perfluorooctanesulfonate, is contrasted with a perfluorobutanesulfonate photoacid generator, which displays an appreciable surface profile to the bulk within a 6 nm segregation length scale. These results, while applied to 193-nm photoresist materials, highlights a general approach to quantifying NEXAFS experimental data.|
|Citation:||Applied Surface Science|
|Pages:||pp. 1010 - 1014|
|Keywords:||immersion lithography,lithography,photoresist,segregation,spectroscopy,thin film|
|PDF version:||Click here to retrieve PDF version of paper (580KB)|