Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Hui Zhou; Joseph Fu; Richard M. Silver;|
|Title:||The Influence of Defects on the Morphology of Si (111) Etched in NHF|
|Published:||January 01, 2005|
|Abstract:||We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our experiments. By introducing both dopant sites and lattice defect sites into the model, we are able to simulate samples having different dopant elements and densities as well as different defect concentrations. With the modified KMC simulation, the simulated surface morphologies agree well with the morphologies observed in our experiments. The enhanced model also gives insights to the formation mechanism multiple level stacking pits, a notable morphology on the etched surfaces of samples with very small miscut angles.|
|Citation:||Journal of Physical Chemistry|
|Pages:||pp. 23386 - 23394|
|Keywords:||kinetic Monte-Carlo (KMC) simulation,lattice defect sites,morphologies of Si (11),stacking pits|
|Research Areas:||Metrology, Manufacturing|