Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||John A. Dagata; T Inoue; J Itoh; K Matsumoto; H Yokoyama;|
|Title:||Voltage Modulation Scanned Probe Oxidation (Abstract)|
|Published:||January 01, 1998|
|Abstract:||This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electric field present at a suitably biased tip-sample junction is an accepted method for nanoelectric device fabrication. The inherent simplicity and generality of this approach has allowed many research groups to contribute to the exploration of novel prototyping strategies and towards a more complete understanding of the control factors needed to reliably fabricate functional devices.|
|Conference:||Microprocesses and Nanotechnology|
|Proceedings:||Microprocesses and Nanotechnology Conference|
|Dates:||July 13-16, 1998|
|Keywords:||anodic oxidation,nanofabrication,scanned probe microscopy,silicon|
|Research Areas:||Metrology, Manufacturing|