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|Author(s):||O Glembocki; J Tuchman; John A. Dagata; K Ko; S Pang; C Stutz;|
|Title:||Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5|
|Published:||January 01, 1998|
|Abstract:||Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 114 - 116|
|Research Areas:||Manufacturing, Metrology|