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Publication Citation: Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5

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Author(s): O Glembocki; J Tuchman; John A. Dagata; K Ko; S Pang; C Stutz;
Title: Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5
Published: January 01, 1998
Abstract: Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it.
Citation: Applied Physics Letters
Volume: 73(1)
Pages: pp. 114 - 116
Research Areas: Metrology, Manufacturing