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|Author(s):||Nhan V. Nguyen; Hao Xiong; John S. Suehle; Oleg A. Kirillov; Eric Vogel; Prashant Majhi; Huang-Chun Wen;|
|Title:||Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.|
|Published:||March 06, 2008|
|Abstract:||Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal. In this letter, internal photoemission was used to determine ??0 of two important ternary metals: [TaN/TaSiN] and [TaN/TaCN] on a single SiO2 layer and a [HfO2/SiO2] stack. On SiO2, ??0 was found to be 3.36 eV and 3.55 eV at [TaN/TaSiN] stack] / SiO2 and [TaN/TaCN stack] / SiO2 interfaces, respectively. However, on the [HfO2/SiO2] stack, ??0 was found pinning at 2.5 eV. For comparisons, flat band voltage measurements will also be presented.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 092907-1 - 092907-3|
|Keywords:||C-V,Gate Dielectrics,HfO2,Interface Barrier Height,Internal Photoemission,Metat Gates,SiO2,TaCN,TaSiN|