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Publication Citation: Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

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Author(s): Tam H. Duong; David Berning; Allen R. Hefner Jr; Keyue M. Smedley;
Title: Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Published: February 25, 2007
Abstract: This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5-kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 10 kV SiC MOSFETs and PiN diodes.
Proceedings: The Applied Power Electronics Conference and Exposition
Pages: pp. 1240 - 1246
Location: Anaheim, CA
Dates: February 25-March 1, 2007
Keywords: Reliability test system, silicon carbide, high-voltage, high-frequency, power devices
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (3MB)