Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

NIST Authors in Bold

Author(s): Jose M. Ortiz-Rodriguez; Allen R. Hefner Jr.; David W. Berning; Colleen E. Hood; S. Olcum;
Title: Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices
Published: July 01, 2006
Abstract: Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for new device metrology computer tools that can aid in the special SiC measurement requirements of high speed combined with high voltage. A description of a developed computer-controlled instrumentation interface required to adequately characterize these new devices is provided, and examples of measurement results are presented
Conference: IEEE COMPEL 2006
Proceedings: Proceedings of the IEEE COMPEL Workshop 2006
Location: Troy, NY
Dates: July 16-19, 2006
Keywords: device characterization,High Frequency,High Power,power semiconductor,Silicon Carbide,user interface
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (622KB)