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Publication Citation: INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

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Author(s): James P. Randa; Susan L. Sweeney; Tom McKay; David K. Walker; David R. Greenberg; Jon Tao; Judah Mendez; G. Ali Rezvani; John J. Pekarik;
Title: INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH
Published: December 01, 2005
Abstract: We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the results were compared. Each of the laboratories used a different measurement method, although two use similar commercial systems. Effects of different calibration values of |S("d"11)|,|S("d"22)|,and |Γ("d"opt)|, and have very low minimum noise figures (below 0.2 dB) over some of the frequency range. For the most part, the measurements at the different laboratoreis are in reasonable agreement, though there are discrepancies. It is also evident that the noise performance of the devices is better than our ability to measure it.
Proceedings: 66TH ARFTG MICROWAVE MEASUREMENTS CONFERENCE
Pages: pp. 77 - 81
Location: Washington, DC
Dates: December 1-2, 2005
Keywords: CMOS transistors, noise, noise parameters, on-wafer measurements
Research Areas: Electronics & Telecommunications, Microelectronics, Electromagnetics
PDF version: PDF Document Click here to retrieve PDF version of paper (162KB)