April 16, 2024
Author(s)
Stephen Moxim, Nicholas Harmon, Kenneth Myers, James P Ashton, Elias Frantz, Michael Flatte, Patrick Lenahan, Jason Ryan
The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases