Blanchard, P.
, Bertness, K.
, Harvey, T.
, Mansfield, L.
, Sanders, A.
and Sanford, N.
(2008),
MESFETs made from individual GaN nanowires, IEEE Transactions on Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32811
(Accessed May 1, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
MESFETs made from individual GaN nanowires
Published
Author(s)
, , , , ,
Abstract
In this paper, we demonstrate novelMESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average ideality factor of 1.6. In addition, the Schottky gates efficiently modulated the conduction of the nanowires. The threshold gate voltages required for complete pinch off were as small as −2.6 V, and transconductances exceeded 1.4 υS. Subthreshold swings approaching 60 mV/decade and ON/OFF current ratios of up to 5 × 108 were achieved. These results show that the Schottky gate has the potential to significantly improve the performance of GaN nanowire field-effect devices.Citation
IEEE Transactions on Nanotechnology
Volume
7
Pub Type
Journals
Download Paper
Keywords
nanotechnology, GaN, MESFETs, Schottky barriers, Schottky diodes
Citation
Created November 1, 2008, Updated February 19, 2017