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Topic Area: Optical Metrology

Displaying records 11 to 20 of 136 records.
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11. Optical constants and spatial uniformity of thermally grown oxide layer of custom, induced-junction, silicon photodiodes for a predictable quantum efficient detector
Topic: Optical Metrology
Published: 6/28/2013
Author: Malcolm Graham White
Abstract: We have investigated the optical properties of self-induced inversion-layer silicon photodiodes using spectroscopic ellipsometric measurement techniques. We report a self-consistent data set and dispersion relation for the optical constants of th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911553

12. 3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties
Topic: Optical Metrology
Published: 6/23/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatt ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913511

13. Spectral responsivity based calibration of photometer and colorimeter standards
Topic: Optical Metrology
Published: 6/19/2013
Author: George P Eppeldauer
Abstract: Several new generation transfer- and working-standard illuminance meters and tristimulus colorimeters have been developed at the National Institute of Standards and Technology (NIST) to measure all kinds of light sources with low uncertainty. The spe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913528

14. Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node
Topic: Optical Metrology
Published: 6/7/2013
Authors: Ravikiran (Ravikiran) Attota, Benjamin D. Bunday, Victor Vertanian
Abstract: We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22  ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913353

15. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Optical Metrology
Published: 4/30/2013
Authors: Ravikiran (Ravikiran) Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

16. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Optical Metrology
Published: 4/30/2013
Authors: Ravikiran (Ravikiran) Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

17. Frequency-agile, rapid scanning spectroscopy
Topic: Optical Metrology
Published: 4/28/2013
Authors: Gar-Wing Truong, Kevin O Douglass, Stephen E Maxwell, Roger D van Zee, David F Plusquellic, Joseph Terence Hodges, David A Long
Abstract: Challenging applications in trace gas analyses require high precision and acquisition rates.1-4 Many continuous-wave laser spectroscopy techniques exhibit significant sensitivity and potential;5 however, their scanning rates are slow because they rel ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912076

18. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Optical Metrology
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

19. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Optical Metrology
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230

20. 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization
Topic: Optical Metrology
Published: 3/25/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield micr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912961



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