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Displaying records 681 to 690 of 702 records.
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681.
Ultrasonic Research in the NIST Manufacturing Engineering Laboratory
Topic: Electronics & Telecommunications
Published: 1/1/2000
Authors: Gerald V. Blessing, Steven Earl Fick, Nelson N. Hsu, John A Slotwinski
Abstract: The Ultrasonics Standards Group in the Manufacturing Engineering Laboratory of the National Institute of Standards and Technology ( NIST) performs research, develops standards, and offers calibration services in support of United States industry. In
...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821923
682.
Ultrasonic Velocity Technique for Non-Destructive Quantification of Elastic Moduli Degradation during Creep in Silicon Nitride
Topic: Electronics & Telecommunications
Published: 5/1/2003
Authors: F Lofaj, Gerald V. Blessing, Sheldon Martin Wiederhorn
Abstract: The ultrasonic velocity technique was used for non-destructive quantification of creep damage during interrupted tensile creep tests at 1400 {degrees}C in an advanced silicon nitride, SN 88. The longitudinal and shear wave velocities, Poisson''s rati
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821895
683.
Ultrasonic leaky Wave Measurements for materials Evaluation
Topic: Electronics & Telecommunications
Published: 1/1/1998
Authors: Nelson N. Hsu, Gerald V. Blessing
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820071
684.
Ultrasound Power Measurement Techniques at NIST
Topic: Electronics & Telecommunications
Published: 11/12/1995
Author: Steven Earl Fick
Abstract: Megahertz-frequency sound waves with submillimeter wavelengths are widely used to probe the interior regions of many types of structures. When human tissues are exposed to ultrasound for diagnostic or therapeutic purposes, the applied power levels m
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820047
685.
Ultrasound Power Measurement by Pulsed Radiation Pressure
Topic: Electronics & Telecommunications
Published: 8/2/1999
Author: Steven Earl Fick
Abstract: In a specially designed radiation force balance (RFB), low-frequency pulse modulation of the incident ultrasound allows high-accuracy measurement of time-averaged spatially-integrated ultrasound power radiated into a reflectionless water load. Errors
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820119
686.
Uncertainties in NIST Noise-Temperature Measurements
Series: Technical Note (NIST TN)
Report Number: 1502
Topic: Electronics & Telecommunications
Published: 3/1/1998
Author: James Paul Randa
Abstract: Uncertainty analyses are presented for NIST measurements of noise temperature. All systems currently used in NIST calibrations of thermal-noise sources are treated. These include tuned systems for 30 and 60 MHz, coaxial total-power radiometers for 1
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11498
687.
Uncertainties in Spherical Near-Field Antenna Measurements
Topic: Electronics & Telecommunications
Published: 8/3/2005
Authors: Michael H Francis, Ronald Curtis Wittmann, Jin-Seob Kang
Abstract: A general approach is presented for estimating uncertainties in far-field parameters obtained from spherical near-field antenna measurements. The error is approximately bounded in terms of the uncertainty of the probe's receiving pattern and the
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31969
688.
Uncertainty Analysis for Noise-Parameter Measurements
Topic: Electronics & Telecommunications
Published: 6/8/2008
Author: James Paul Randa
Abstract: A brief summary is presented for the uncertainty analysis for measurements of noise parameters of amplifiers and transistors, in both connectorized (coaxial) and on-wafer environments. We treat both the X-parameters, which are based on the wave repre
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32904
689.
Uncertainty Analysis for Noise-Parameter Measurements at NIST
Topic: Electronics & Telecommunications
Published: 4/9/2009
Author: James Paul Randa
Abstract: The uncertainty analysis is presented for NIST measurements of noise parameters of amplifiers and transistors, in both connectorized (coaxial) and on-wafer environments. We treat both the X-parameters, which are based on the wave representation of t
...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33026
690.
Use of an Ion Energy Analyzer-Mass Spectrometer to Measure Ion Kinetic-Energy Distributions from RF Discharges in Argon-Helium Gas Mixtures
Topic: Electronics & Telecommunications
Published: 3/1/1994
Authors: James K Olthoff, Richard J. Van Brunt, S. B. Radovanov, J. A. Rees
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1903