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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 101 to 110 of 136 records.
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101. Probing molecules in integrated solid-state silicon junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/12/2008
Authors: Wenyong Wang, Adina Scott, Nadine Emily Gergel-Hackett, Christina Ann Hacker, David Janes, Curt A Richter
Abstract: In this research work, we fabricate integrated Si-SAMs-metal devices using the ?soft? top metal deposition technique and probe their electronic properties with IETS characterizations. IETS confirmed the existence of molecular species in the device ar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32700

102. Purification Chemical Structure Electrical Property Relationship in Gold Nanoparticle Liquids
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/1/2010
Authors: Robert I. MacCuspie, Andrea M Elsen, Steve J Diamanti, Steve T Patton, Igor Altfeder, J. David Jacobs, Andrey A Voevodin, Richard A Vaia
Abstract: Macroscopic assemblies of nanoparticles are a new class of materials that exhibit unique properties compared to both bulk and isolated nanoparticle states. To more accurately probe the structure-property relationships of these materials, this report ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903692

103. Resonant Microwave Absorption in Thermally Deposited Au Nanoparticle Films Near Percolation Coverage
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/19/2013
Authors: Jan Obrzut, Jack F Douglas, Oleg A Kirillov, Fred Sharifi, James Alexander Liddle
Abstract: We observe a resonant transition in microwave absorption in thin thermally deposited Au nanoparticle films near the geometrical percolation transition pc where the films exhibit a ,fractal‰ heterogeneous geometry. The absorption of incident microwa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912786

104. Rotational Grain Boundaries in Graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/12/2011
Authors: Eric J Cockayne, Gregory M. Rutter, N Guisinger, Jason Crain, Joseph A Stroscio, Phillip First
Abstract: Defects in graphene are of interest for their effect on electronic transport in this two-dimensional material. Point defects of typically two-fold and three-fold symmetry have long been observed in scanning tunneling microscopy (STM) studies of gra ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906586

105. Sensitivity of gold nano conductors to common contaminations ‹ ab initio results
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/29/2013
Authors: Shmuel Barzilai, Francesca M Tavazza, Lyle E Levine
Abstract: Gold nanowire chains are considered a good candidate for nanoelectronic devices because they exhibit remarkable structural and electrical properties. A previous study shows that the beryllium terminated BeO (0001) surface may be a useful platform for ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913345

106. Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/9/2009
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, H Gu, Helmut Baumgart, John E Bonevich, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907138

107. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

108. Solution-Processed Flexible Memristors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/10/2009
Authors: Nadine Emily Gergel-Hackett, Laurie A. Stephey, Barbara Dunlap, Behrang H Hamadani, David J Gundlach, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905411

109. Spin transport in memristive devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149

110. Spin-Polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/9/2006
Authors: Wenyong Wang, Curt A Richter
Abstract: Inelastic electron tunneling spectroscopy (IETS) of molecular magnetic tunnel junctions of self-assembled octanethiol molecules confined between two ferromagnetic electrodes was investigated. Obtained IETS spectra confirmed the presence of molecular ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32242



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