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You searched on: Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 1 to 10 of 142 records.
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1. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei (Wei NMN) Li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

2. Reliability of Low Temperature Grown Multi-Wall Carbon Nanotube Bundles Integrated as Vias in Monolithic Three-Dimensional Integrated Circuits
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/26/2014
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, Aric Warner Sanders, Alexandra E Curtin, R. Ishihara, David Thomas Read
Abstract: In this extended abstract we present our recent results on the reliability testing of multi-wall carbon nanotube vertical interconnects (vias).
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915382

3. Dominant Thermal Boundary Resistance in Multi-Walled Carbon Nanotube Bundles Fabricated at Low Temperatures
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/11/2014
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, Sarbajit Banerjee, Kees Beenakker, R. Ishihara
Abstract: While carbon nanotubes (CNT) have been suggested as thermal management mate- rial for integrated circuits, the thermal properties and especially the thermal bound- ary resistance (TBR) of as-grown CNT have hardly been investigated. Here the therma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915307

4. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/1/2014
Authors: Paul Timothy Blanchard, Kristine A Bertness, Todd E Harvey, Norman A Sanford
Abstract: Contact resistivity {rho}^dc^ is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nano ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914876

5. DESIGN OF TEST STRUCTURE FOR 3D-STACKED INTEGRATED CIRCUITS (3D-SICS) METROLOGY
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/25/2014
Authors: Lin You, Jungjoon Ahn, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914744

6. Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/17/2014
Authors: Wei (Wei NMN) Li, Christina Ann Hacker, Guangjun Cheng, Angela R Hight Walker, Curt A Richter, David J Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
Abstract: Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915002

7. Effect of wire configuration and point defects on the conductance of gold nano-conductors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/28/2014
Authors: Shmuel Barzilai, Francesca M Tavazza, Lyle E Levine
Abstract: Gold nanowire (NW) chains are considered a good candidate for nanoelectronics devices because they exhibit remarkable structural and electrical properties. One promising nano-conductor candidate is called ,Hexa1Š. This NW configuration was found to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913936

8. Head and Media Challenges for 3 Tb/in^u2^ Microwave Assisted Magnetic Recording
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/3/2014
Authors: Thomas J Silva, Justin M Shaw, Hans Toya Nembach, Mike Mallary, Kumar Srinivasan, Gerado Bertero, Dan Wolf, Christian Kaiser, Michael Chaplin, Mahendra Pakala, Leng Qunwen, Yiming Wang, Carl Elliot, Lui Francis
Abstract: A specific design for Microwave Assisted Magnetic Recording (MAMR) at about 3Tb/in^u2^ (0.47 Tb/cm^u2^ or 4.7 Pb/m^u2^) is discussed in detail to highlight the challenges of MAMR and to contrast its requirements with conventional Perpendicular Magnet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914220

9. Resonant Microwave Absorption in Thermally Deposited Au Nanoparticle Films Near Percolation Coverage
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/19/2013
Authors: Jan Obrzut, Jack F Douglas, Oleg A Kirillov, Fred Sharifi, James Alexander Liddle
Abstract: We observe a resonant transition in microwave absorption in thin thermally deposited Au nanoparticle films near the geometrical percolation transition pc where the films exhibit a ,fractal‰ heterogeneous geometry. The absorption of incident microwa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912786

10. Sensitivity of gold nano conductors to common contaminations ‹ ab initio results
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/29/2013
Authors: Shmuel Barzilai, Francesca M Tavazza, Lyle E Levine
Abstract: Gold nanowire chains are considered a good candidate for nanoelectronic devices because they exhibit remarkable structural and electrical properties. A previous study shows that the beryllium terminated BeO (0001) surface may be a useful platform for ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913345



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