NIST logo

Publications Portal

You searched on:
Topic Area: Characterization, Nanometrology, and Nanoscale Measurements

Displaying records 51 to 60 of 211 records.
Resort by: Date / Title


51. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui H. Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

52. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230

53. Distributed Force Probe Bending Model of CD-AFM Bias
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and signif ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912266

54. Robust Elemental Mapping of Nanostructures at Ultrahigh Resolution using Event-Streamed Spectrum Imaging in an Aberration-Corrected Analytical Electron Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Andrew A Herzing, Ian M. Anderson
Abstract: We detail the application of X-ray energy dispersive spectroscopy (XEDS) event-streamed spectral imaging (ESSI) in an aberration-corrected analytical electron microscope (AEM) as a reliable method for the acquisition of ultra-high spatial resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910229

55. Metrology For Organic Monolayers On Cobalt Surfaces
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

56. Frontiers of Characterization and Metrology for Nanoelectronics: 2013
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/26/2013
Authors: Erik M Secula, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913713

57. Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A Richter
Abstract: The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been appl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913172

58. Measurement Uncertainties in MEMS Kinematics by Super-Resolution Fluorescence Microscopy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Craig Dyer McGray, Samuel M Stavis, Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912891

59. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

60. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui H. Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series