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You searched on: Topic Area: Nanomanufacturing

Displaying records 1 to 10 of 39 records.
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1. Rapid Prototyping of Nanofluidic Slits in a Silicone Bilayer
Topic: Nanomanufacturing
Published: 11/17/2015
Authors: Thomas Pedicino Kole, Kuo-Tang Liao, Daniel Robert Paul Schiffels, Bojan R Ilic, Elizabeth A Strychalski, Jason G Kralj, James Alexander Liddle, Anatoly Dritschilo, Samuel M Stavis

2. Orthogonal Analysis of Functional Gold Nanoparticles for Biomedical Applications
Topic: Nanomanufacturing
Published: 9/11/2015
Authors: De-Hao D. Tsai, Yi-Fu Lu, Frank W DelRio, Tae Joon Cho, Suvajyoti S. Guha, Michael Russel Zachariah, Fan Zhang, Andrew John Allen, Vincent A Hackley
Abstract: We report a comprehensive strategy based on implementation of orthogonal measurement techniques to provide critical and verifiable material characteristics for functionalized gold nanoparticles (AuNPs) used in biomedical applications. Thiolated polye ...

3. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Topic: Nanomanufacturing
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...

4. Friction imprint effect in mechanically cleaved BaTiO3 (001)
Topic: Nanomanufacturing
Published: 9/28/2014
Authors: Christian John Long, Daniel Ebeling, Santiago D. Solares, Rachel J. Cannara

5. Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields
Topic: Nanomanufacturing
Published: 7/23/2014
Authors: Nathan D Orloff, Jan Obrzut, Christian John Long, Thomas F. Lam, James C Booth, David R Novotny, James Alexander Liddle, Pavel Kabos
Abstract: The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. ...

6. Laser-assisted atom probe tomography of MBE grown GaN nanowire heterostructures
Topic: Nanomanufacturing
Published: 2/24/2014
Authors: Norman A Sanford, Paul T Blanchard, Matthew David Brubaker, Kristine A Bertness, John B. Schlager, R Kirchofer, David R Diercks, Brian Gorman
Abstract: Laser-assisted atom probe tomography (L-APT) was performed on GaN nanowires (NWs) and axial GaN/InGaN nanowire heterostructures. All samples were grown by MBE on Si(111) substrates. The laser pulse energy (PE) at 355 nm used in L-APT analysis of Ga ...

7. Does Your SEM Really Tell the Truth? - How would you know? Part 1
Topic: Nanomanufacturing
Published: 12/16/2013
Authors: Michael T Postek, Andras Vladar
Abstract: The scanning electron microscope (SEM) has gone through a tremendous evolution to become a critical tool for many and diverse scientific and industrial applications. The high resolution of the SEM is especially suited for both qualitative and quantit ...

8. Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects
Topic: Nanomanufacturing
Published: 11/13/2013
Authors: Norman A Sanford, David R Diercks, Brian Gorman, R Kirchofer, Kristine A Bertness, Matthew David Brubaker
Abstract: The field evaporation behavior of c-axis GaN nanowires was explored in two different laser-pulsed atom probe tomography (APT) instruments. Transmission electron microscopy imaging before and after atom probe tomography analysis was used to assist in ...

9. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Topic: Nanomanufacturing
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...

10. Size-independent effects on nanoparticle retention behavior in asymmetric flow field-flow fractionation
Topic: Nanomanufacturing
Published: 5/29/2013
Authors: Julien C. Gigault, Vincent A Hackley
Abstract: In this work we highlight the size-independent influence of the material properties of nanoparticles on their retention behavior in asymmetric-flow field-flow fractionation (A4F). The phenomena described here suggest there are limits to the effec ...

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