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Displaying records 141 to 150 of 156 records.
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141. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901503

142. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32176

143. The Absorption Cross Section of As in Si
Topic: Semiconductors
Published: 12/31/1989
Authors: Jon C Geist, M. G. Stapelbroek, M. D. Petroff
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10869

144. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun Wook Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852642

145. The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Topic: Semiconductors
Published: 10/17/2008
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33210

146. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Topic: Semiconductors
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32958

147. The transient behavior of NBTI - A new prospective
Topic: Semiconductors
Published: 10/17/2008
Authors: Kin P Cheung, Jason P Campbell
Abstract: The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33052

148. Thermal Stability of Confined Flip-Chip Laminated w-Functionalized Monolayers
Topic: Semiconductors
Published: 12/3/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: We present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on ultrasmooth gold substrate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903011

149. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr.
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

150. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Topic: Semiconductors
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210



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