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Topic Area: Semiconductors
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Displaying records 141 to 149.
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141. Thermal Stability of Confined Flip-Chip Laminated w-Functionalized Monolayers
Topic: Semiconductors
Published: 12/3/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: We present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on ultrasmooth gold substrate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903011

142. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

143. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Topic: Semiconductors
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

144. US Anti-Counterfeiting Standards Development Activities: An Overview
Topic: Semiconductors
Published: 12/1/2010
Authors: Yaw S Obeng, Eric D Simmon, YaShian Li-Baboud
Abstract: Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907215

145. Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study
Topic: Semiconductors
Published: 4/2/2004
Authors: Safak Sayan, Robert A Bartynski, Xin Zhao, Evgeni Gusev, David V Vanderbilt, Mark Croft, M M Banaszak-Holl, Eric Garfunkel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906325

146. Wafer-level Hall Measurement on SiC MOSFET
Topic: Semiconductors
Published: 10/11/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

147. Wafer-level Hall Measurement on SiC MOSFET
Topic: Semiconductors
Published: 10/16/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907098

148. Will Future Measurement Needs for the Semiconductor Industry Be Met?
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 1/1/2007
Authors: Herbert S Bennett, Alain C. Diebold, C. Michael Garner
Abstract: We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32296

149. X-Ray Micro-Beam Diffraction Measurement of the Effect of Thermal Cycling on Stress in Cu TSV: A Comparative Study
Topic: Semiconductors
Published: 5/26/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this study, we examined the impact of thermal cycling on the evolution of stresses in Cu TSVs us ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915644



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