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1. 2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Topic: Semiconductors
Published: 1/1/2013
Authors: Christina Ann Hacker, Alain C. Diebold
Abstract: During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The ...

Topic: Semiconductors
Published: Date unknown
Author: Herbert S Bennett
Abstract: Radio frequency (RF), high frequency (HF), and analog/mixed-signal (AMS) technologies serve the rapidly growing communications markets that include many of the physical components for the Internet of Everything (IoE) (e.g., ...

3. A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension
Topic: Semiconductors
Published: 1/28/2002
Authors: Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald Leland Jones, Eric K Lin, Christopher L Soles, Wen-Li Wu, D M Goldfarb, M Angelopoulos
Abstract: A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of process ...

4. A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Topic: Semiconductors
Published: 12/23/2008
Authors: Richard A Allen, Janet M Cassard, Winthrop A. Baylies, David Thomas Read, George David Quinn, Frank W DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract: A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the tes ...

5. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Topic: Semiconductors
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

6. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Semiconductors
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...

7. Advanced Power Conditioning System Technologies for High-Megawatt Fuel Cell Power Plants
Topic: Semiconductors
Published: 7/1/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...

8. An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices
Topic: Semiconductors
Published: 9/1/2008
Authors: Yun Wang, Kin P Cheung, Y.J. Choi, Byoung Hun Lee
Abstract: Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offer ...

9. An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability
Topic: Semiconductors
Published: 1/5/2009
Authors: J.T. Ryan, P. M. Lenahan, A.T. Krishnan, S. Krishnan, Jason P Campbell
Abstract: It has been shown that the negative bias temperature instability (NBTI) may be significantly suppressed through the incorporation of fluorine in the gate oxide. In this study, we use the electrically-detected magnetic resonance technique of spin depe ...

10. An Evaluation of Instrumental Correction Factors for Infrared Absorption Concentration Measurements,
Topic: Semiconductors
Published: 12/31/1989
Authors: D. Baghdadi, Erik M Secula

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