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Topic Area: Semiconductors
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Displaying records 31 to 40 of 152 records.
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31. Optical illumination optimization for patterned defect inspection
Topic: Semiconductors
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui H. Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

32. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

33. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

34. Development, Performance and Applications of 4.5 kV SiC JBS Diodes
Topic: Semiconductors
Published: 3/22/2011
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908466

35. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470

36. US Anti-Counterfeiting Standards Development Activities: An Overview
Topic: Semiconductors
Published: 12/1/2010
Authors: Yaw S Obeng, Eric D Simmon, YaShian Li-Baboud
Abstract: Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907215

37. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductors
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704

38. Graphene Nanoribbon Tunnel FETs
Topic: Semiconductors
Published: 9/21/2010
Author: Qin Q. Zhang
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907100

39. Graphene Nanoribbon Schottky-barrier FETs for End-of-the-roadmap CMOS: Challenges and Opportunities
Topic: Semiconductors
Published: 6/23/2010
Authors: Qin Q. Zhang, Yeqing Lu, Huili Xing, Curt A Richter, Steven J Koester, Siyuranga Koswatta
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907102

40. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Semiconductors
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539



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