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Topic Area: Semiconductors
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Displaying records 131 to 140 of 151 records.
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131. Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Topic: Semiconductors
Published: 11/11/2005
Authors: Herbert S Bennett, Howard Hung
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the ch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31933

132. Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry
Topic: Semiconductors
Published: 2/23/2005
Authors: B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L Soles, Wen-Li Wu, Eric K Lin, Barry J. Bauer, J J. Watkins
Abstract: Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852370

133. Micropatterning Neuronal Cells on Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 7/7/2004
Authors: Darwin R Reyes-Hernandez, Elizabeth M. Perruccio, Patricia Becerra, Laurie E Locascio, Michael Gaitan
Abstract: This paper describes an approach to adhere retinal cells on micropatterned polyelectrolyte multilayer (PEM) lines adsorbed on polydimethylsiloxane (PDMS) surfaces, using microfluidic networks. PEMs were patterned on flat oxidized PDMS surfaces by seq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31659

134. Characterization of Pore Structure in Nanoporous Low-Dielectric Constant Thin Film by Neutron Porosimetry X-Ray Porosimetry
Topic: Semiconductors
Published: 7/2/2004
Authors: R C. Hedden, Hae-Jeong Lee, Christopher L Soles, Barry J. Bauer
Abstract: A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852279

135. Compound Semiconductor Roadmap Embedded in the 2003 International Technology Roadmap for Semiconductors
Topic: Semiconductors
Published: 7/1/2004
Author: Herbert S Bennett
Abstract: This paper contains higlights from a technology roadmap on compound semiconductors. This roadmap is part on an overall technology roadmap on RF and analog-mixed signal (AMS) technologies for wireless communications that is in the 2003 International T ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31661

136. Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study
Topic: Semiconductors
Published: 4/2/2004
Authors: Safak Sayan, Robert A Bartynski, Xin Zhao, Evgeni Gusev, David V Vanderbilt, Mark Croft, M M Banaszak-Holl, Eric Garfunkel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906325

137. Semiconductor Factory and Equipment Time Synchronization
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7088
Topic: Semiconductors
Published: 2/25/2004
Authors: YaShian Li-Baboud, Brad Van Eck
Abstract: With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31600

138. Raman and Magneto Transport Studies of MBE Grown B-FeSi2, B-(Fe1-xCrx)Si2, and B-(Fe1-xCox)Si2
Topic: Semiconductors
Published: 5/1/2002
Authors: A Srujana, A Wadhawan, K Srikala, R L Cottier, W Zhao, Christopher Littler, J M. Perez, T D Golding, Anthony Birdwell, W Henrion, M Rebien, P Stauss, R Glosser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906323

139. A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension
Topic: Semiconductors
Published: 1/28/2002
Authors: Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald Leland Jones, Eric K Lin, Christopher L Soles, Wen-Li Wu, D M Goldfarb, M Angelopoulos
Abstract: A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of process ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852808

140. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25004



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