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Displaying records 41 to 48.
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41. Development of a Seebeck Coefficient Standard Reference Material
Topic: Semiconductors
Published: 8/7/2009
Authors: Nathan Lowhorn, Winnie K Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
Abstract: We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniq ...

42. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Topic: Semiconductors
Published: 4/2/2009
Authors: Michael W. Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...

43. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Semiconductors
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...

44. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...

45. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Semiconductors
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...

46. Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate
Topic: Semiconductors
Published: 1/8/2009
Authors: Winnie K Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
Abstract: We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with thos ...

47. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: 1/17/2008
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...

48. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Topic: Semiconductors
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

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