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Topic Area: Semiconductors
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Displaying records 131 to 135.
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131. An Evaluation of Instrumental Correction Factors for Infrared Absorption Concentration Measurements,
Topic: Semiconductors
Published: 12/31/1989
Authors: D. Baghdadi, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26303

132. Current Status of, and Future Directions in, Silicon Photodiode Self-Calibration
Topic: Semiconductors
Published: 12/31/1989
Author: Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29375

133. The Absorption Cross Section of As in Si
Topic: Semiconductors
Published: 12/31/1989
Authors: Jon C Geist, M. G. Stapelbroek, M. D. Petroff
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10869

134. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

135. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Topic: Semiconductors
Published: 1/2/0013
Authors: Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713