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Topic Area: Semiconductors

Displaying records 71 to 80 of 135 records.
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71. Negative-Bias Temperature Instability Induced Electron Trapping
Topic: Semiconductors
Published: 7/21/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33034

72. Advanced Power Conditioning System Technologies for High-Megawatt Fuel Cell Power Plants
Topic: Semiconductors
Published: 7/1/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32843

73. Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Topic: Semiconductors
Published: 6/17/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and el ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32983

74. Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy
Topic: Semiconductors
Published: 5/27/2008
Authors: Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr
Abstract: Photoreflectance spectra obtained from epitaxial films of semiconducting {Beta}-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33076

75. Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films
Topic: Semiconductors
Published: 5/16/2008
Authors: Peter K. Schenck, Jennifer L Klamo, Nabil Bassim, Peter G. Burke, Yvonne Beatrice Gerbig, Martin L Green
Abstract: HfO2-TiO2-Y2O3 is an interesting high-k dielectric system.  Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties.  A library film of this syst ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853610

76. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Topic: Semiconductors
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32958

77. Investigation of Electron Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers
Topic: Semiconductors
Published: 5/8/2008
Authors: Yi Chen, Ning Zhang, M Dudley, JOSHUA CALDWELL, Kendrick Liu, ROBERT STAHLBUSH, XIANRONG HUANG, A T Macrander, David R Black
Abstract: Electron hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853599

78. Electronic Wiring of a Multi-Redox Site Membrane Protein in a Biomimetic Surface Architecture
Topic: Semiconductors
Published: 5/5/2008
Authors: Marcel G Friedrich, Joseph William Robertson, Dieter Walz, Wolfgang Knoll, Renate L Naumann
Abstract: Electronic coupling of proteins to electrodes is an active field of research. Electronic coupling of membrane proteins remains difficult because the proteins require a bilayer lipid membrane to stay functionally intact. A biomimetic membrane system i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32532

79. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962

80. Demonstration of Molecular Assembly on Silicon (100) for CMOS-Compatible Molecule-Based Electronic Devices
Topic: Semiconductors
Published: 3/7/2008
Authors: Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Lee J Richter, Curt A Richter
Abstract: In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the CMOS-compatible silicon (100) orientation for use in closed, planar, molecular electronic devices. We develop processes for m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32875