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Topic Area: Semiconductors

Displaying records 121 to 130 of 147 records.
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121. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Topic: Semiconductors
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

122. Microhotplate-Based Sensor Platform for Submicron SoC Designs
Topic: Semiconductors
Published: 12/9/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Jon C Geist, Colleen E. Hood, Ankush Varma, Bruce Jacob
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32489

123. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Topic: Semiconductors
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31903

124. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Topic: Semiconductors
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

125. Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Topic: Semiconductors
Published: 11/22/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, James J Chambers, Mark R Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and cond ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32000

126. Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition
Topic: Semiconductors
Published: 11/17/2005
Authors: Nhan V Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Abstract: Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Elec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31774

127. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Topic: Semiconductors
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

128. Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Topic: Semiconductors
Published: 11/11/2005
Authors: Herbert S Bennett, Howard Hung
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the ch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31933

129. Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry
Topic: Semiconductors
Published: 2/23/2005
Authors: B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L Soles, Wen-Li Wu, Eric K Lin, Barry J. Bauer, J J. Watkins
Abstract: Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852370

130. Micropatterning Neuronal Cells on Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 7/7/2004
Authors: Darwin R Reyes-Hernandez, Elizabeth M. Perruccio, Patricia Becerra, Laurie E Locascio, Michael Gaitan
Abstract: This paper describes an approach to adhere retinal cells on micropatterned polyelectrolyte multilayer (PEM) lines adsorbed on polydimethylsiloxane (PDMS) surfaces, using microfluidic networks. PEMs were patterned on flat oxidized PDMS surfaces by seq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31659



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