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Topic Area: Semiconductors

Displaying records 121 to 130 of 135 records.
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121. Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study
Topic: Semiconductors
Published: 4/2/2004
Authors: Safak Sayan, Robert A Bartynski, Xin Zhao, Evgeni Gusev, David V Vanderbilt, Mark Croft, M M Banaszak-Holl, Eric Garfunkel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906325

122. Semiconductor Factory and Equipment Time Synchronization
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7088
Topic: Semiconductors
Published: 2/25/2004
Authors: YaShian Li-Baboud, Brad Van Eck
Abstract: With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31600

123. Raman and Magneto Transport Studies of MBE Grown B-FeSi2, B-(Fe1-xCrx)Si2, and B-(Fe1-xCox)Si2
Topic: Semiconductors
Published: 5/1/2002
Authors: A Srujana, A Wadhawan, K Srikala, R L Cottier, W Zhao, Christopher Littler, J M. Perez, T D Golding, Anthony Birdwell, W Henrion, M Rebien, P Stauss, R Glosser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906323

124. A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension
Topic: Semiconductors
Published: 1/28/2002
Authors: Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald Leland Jones, Eric K Lin, Christopher L Soles, Wen-Li Wu, D M Goldfarb, M Angelopoulos
Abstract: A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of process ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852808

125. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25004

126. Embedded Decoupling Capacitance Materials Characterization
Topic: Semiconductors
Published: 12/1/2000
Author: Jan Obrzut
Abstract: The dielectric constant of the embedded capacitance materials was measured in the frequency range from 100 Hz to 5 GHz. The testing included evaluation of the capacitance density, leakage current, and the effect of HAST on the capacitance. A test sp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851697

127. Micromachined Branch Line Coupler in CMOS Technology
Topic: Semiconductors
Published: 6/1/2000
Authors: Mehmet Ozgur, Ulas C. Kozat, Mona Elwakkad Zaghloul, Michael Gaitan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906354

128. Charaterization of PFC Emissions from Semiconductor Process Tools
Topic: Semiconductors
Published: 9/1/1998
Authors: David S. Green, J. Meyers
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903728

129. Interconnection Continuity Test for Packaged Functional Modules
Topic: Semiconductors
Published: 3/3/1998
Author: Jan Obrzut
Abstract: We developed an electrical test to evaluate interconnections in packaged, electrostatic-discharge (ESD) protected modules. The ESD protection circuit, which in modern integrated circuits is present at every I/O as an inherent part of the chip struct ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854051

130. Building-In Reliability: Making It Work
Topic: Semiconductors
Published: 5/1/1991
Authors: Harry A. Schafft, D F Lee, P. E. Kennedy
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6948