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Topic Area: Optoelectronics

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1. Characterizing a Noninsertable Directional Device Using the NIST Uncertainty Framework
Topic: Optoelectronics
Published: 6/6/2014
Authors: Jeffrey A Jargon, Dylan F Williams, Paul D Hale, Michael D Janezic
Abstract: We characterize and provide uncertainties for a noninsertable, directional device over a frequency range of 90 to 100 GHz using the NIST Microwave Uncertainty Framework in conjunction with a commercial vector network analyzer. Our device consists of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913524

2. Non-imaging Winston Cone Concentrators for Submillimeter-wave, Overmoded Waveguide
Topic: Optoelectronics
Published: 1/1/2014
Authors: Erich N Grossman, Oscar D Friedman, Andrew O Nelson
Abstract: We describe the design, simulation, and measured performance of concentrators designed to couple submillimeter wavelength radiation from free space into highly overmoded, rectangular, WR-10 waveguide. They consist of a combination of a Winston cone, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914322

3. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Optoelectronics
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911884

4. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Optoelectronics
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul Timothy Blanchard, John B Schlager, Aric Warner Sanders, Alexana Roshko, Shannon Marie Madison Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912280

5. Low-frequency noise in gallium nitride nanowire mechanical resonators
Topic: Optoelectronics
Published: 12/7/2012
Authors: Jason Gray, Kristine A Bertness, Norman A Sanford, Charles T. Rogers
Abstract: We report on the low-frequency 1/f (flicker) parameter noise displayed by the resonance frequency and resistance of doubly clamped c-axis gallium nitride nanowire (NW) mechanical resonators. The resonators are electrostatically driven and their mech ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909950

6. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Topic: Optoelectronics
Published: 8/27/2012
Authors: Christopher M. Dodson, Patrick Parkinson, Kristine A Bertness, Hannah J Joyce, Laura M Herz, Norman A Sanford, Michael B Johnston
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911320

7. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Topic: Optoelectronics
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396

8. Comb-assisted swept laser spectroscopy with a mode-hop free tunable external cavity QCL
Topic: Optoelectronics
Published: 5/1/2012
Authors: Kevin O. (Kevin) Knabe, Fabrizio Raphael Giorgetta, Nathan Reynolds Newbury, Chris Armacost, Michael Radunsky, Sam Crivello, Timothy Day, Paul A Williams
Abstract: We demonstrate sub-MHz spectral resolution of N^d2^O absorption spectra acquired with a swept external-cavity quantum cascade laser (QCL) over 0.87 THz. The QCL frequency is monitored by sum -frequency generation with an optical fiber frequency comb.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910257

9. Optical fiber-coupled cryogenic radiometer with carbon nanotube absorber
Topic: Optoelectronics
Published: 4/1/2012
Authors: David J Livigni, Nathan A Tomlin, Christopher L Cromer, John H Lehman
Abstract: A cryogenic radiometer was constructed for direct-substitution optical fiber power measurements. The cavity is intended to operate at the 3 K temperature stage of a dilution refrigerator or 4.2 K stage of a liquid cryostat. The optical fiber is remov ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909507

10. Frequency Characterization of an External-Cavity Quantum Cascade Laser at 4.5 {mu}m using a Frequency Comb
Topic: Optoelectronics
Published: 1/25/2012
Authors: Kevin O. (Kevin) Knabe, Paul A Williams, Fabrizio Raphael Giorgetta, Chris Armacost, Michael Radunsky, Nathan Reynolds Newbury
Abstract: We measure the frequency noise spectrum of a free-running external-cavity quantum cascade laser at 4.5 {mu}m through sum frequency generation with a fiber frequency comb.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909814



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